Rram memory cell with multiple filaments

ABSTRACT

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a conductive element disposed within a dielectric structure over the substrate. The conductive element has a top surface extend between outermost sidewalls of the conductive element. A first resistive random access memory (RRAM) element is arranged within the dielectric structure and has a first data storage layer directly contacting the top surface of the conductive element. A second RRAM element is arranged within the dielectric structure and has a second data storage layer directly contacting the top surface of the conductive element.

REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.16/202,576, filed on Nov. 28, 2018, which is a Divisional of U.S.application Ser. No. 15/904,963, filed on Feb. 26, 2018, which claimsthe benefit of U.S. Provisional Application No. 62/552,078, filed onAug. 30, 2017. The contents of the above-referenced patent applicationsare hereby incorporated by reference in their entirety.

BACKGROUND

Many modern day electronic devices contain electronic memory configuredto store data. Electronic memory may be volatile memory or non-volatilememory. Volatile memory stores data when it is powered, whilenon-volatile memory (NVM) is able to store data when power is removed.Resistive random access memory (RRAM) is one promising candidate for anext generation of non-volatile memory due to its simple structure andits compatibility with CMOS logic fabrication processes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a schematic diagram of some embodiments of a memorycircuit having an RRAM (resistive random access memory) cell withmultiple RRAM elements.

FIG. 2 illustrates a cross-sectional view of some embodiments of anintegrated chip comprising a memory circuit having an RRAM cell withmultiple RRAM elements respectively configured to form a conductivefilament.

FIG. 3 illustrates a cross-sectional view of some additional embodimentsof an integrated chip comprising a memory circuit having an RRAM cellwith multiple RRAM elements.

FIG. 4 illustrates a cross-sectional view of some additional embodimentsof an integrated chip having a logic region and an embedded memoryregion comprising an RRAM cell having multiple RRAM elements.

FIG. 5 illustrates a cross-sectional view of some additional embodimentsof an integrated chip comprising a memory circuit having an RRAM cellwith multiple RRAM elements.

FIG. 6 illustrates a cross-sectional view of some additional embodimentsof an integrated chip comprising a memory circuit having an RRAM cellwith multiple RRAM elements.

FIG. 7 illustrates a schematic diagram of some embodiments of a memoryarray having RRAM cells that respectively comprise multiple RRAMelements.

FIGS. 8A-8B illustrate some embodiments of operating conditions of amemory circuit having an RRAM cell with multiple RRAM elements.

FIGS. 9-17 illustrate cross-sectional views of some embodiments of amethod of forming an integrated chip comprising a memory circuit havingan RRAM cell with multiple RRAM elements.

FIG. 18 illustrates a flow diagram of some embodiments of a method offorming an integrated chip comprising a memory circuit having an RRAMcell with multiple RRAM elements.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A resistive random access memory (RRAM) cell typically comprises a layerof high-k dielectric material arranged between conductive electrodesdisposed within a back-end-of-the-line (BEOL) stack. The RRAM cell isconfigured to operate based upon a process of reversible switchingbetween resistive states. This reversible switching is enabled byselectively forming a conductive filament through the layer of high-kdielectric material. For example, the layer of high-k dielectricmaterial, which is normally insulating, can be made to conduct byapplying a voltage across the conductive electrodes to form a conductivefilament extending through the layer of high-k dielectric material. Alayer of high-k dielectric material having a first (e.g., high)resistance corresponds to a first data state (e.g., a logical ‘0’) and alayer of high-k dielectric material having a second (e.g., low)resistance corresponds to a second data state (e.g., a logical ‘1’).

The resistance of the layer of high-k dielectric material is based on asize of the conductive filament. For example, a conductive filamenthaving a first size (e.g., width) will provide the RRAM cell with adifferent resistance than a conductive filament having a different,second size. The size of a conductive filament may be based on a voltageand/or current used to form an initial conductive filament within thelayer of high-k dielectric material. However, because the voltage and/orcurrent used to form the initial conductive filament is limited, thefilament provides for a limited decrease in a resistance of the RRAMcell that can lead to degradation in performance. For example, a limiteddecrease in resistance results in an RRAM cell having highly resistivedata states that limit a current that can be used to read the RRAM cell.Limiting the current that can be used to read the RRAM cell results in asmall difference in read currents (i.e., a read current window) betweena first data state (e.g., a ‘0’) and a second data state (e.g., a ‘1’).The small difference in read currents makes it difficult to accuratelyread data states from an RRAM cell.

The present disclosure, in various embodiments, relates to a memorycircuit having an RRAM cell comprising multiple RRAM elementsrespectively configured to form a conductive filament. The memorycircuit has a first RRAM element that is arranged within a dielectricstructure over a substrate and that has a first conjunct electrodeseparated from a first disjunct electrode by a first data storage layer.A second RRAM element is arranged within the dielectric structure andhas a second conjunct electrode separated from a second disjunctelectrode by a second data storage layer. The first conjunct electrodeis electrically coupled to the second conjunct electrode. Electricallycoupling the first and second RRAM elements allows for read currentsdescribing a single data state to be generated by both the first andsecond RRAM elements. By combining the read currents to describe thesingle data state, an overall read current of the memory cell isincreased and performance degradation due to a limited resistance of asingle conductive filament is mitigated.

FIG. 1 illustrates a schematic diagram of some embodiments of a memorycircuit 100 having a resistive random access memory (RRAM) cellcomprising multiple RRAM elements.

The memory circuit 100 comprises an RRAM cell 102 configured to store asingle data state (e.g., a logical ‘0’ or ‘1’) using separate RRAMelements 104 a-104 b coupled to a control device 112. The RRAM cell 102includes a first RRAM element 104 a and a second RRAM element 104 b. Thefirst RRAM element 104 a is coupled between a first terminal of thecontrol device 112 and a first bit-line BL₁ and the second RRAM element104 b is coupled between the first terminal of the control device 112and a second bit-line BL₂. The control device 112 further comprises asecond terminal coupled to a source-line SL and a third terminal coupledto a word-line WL. In some additional embodiments, the RRAM cell 102 mayhave one or more additional RRAM elements (e.g., so that the RRAM cell102 has three or more RRAM elements), which are connected between thefirst terminal of the control device 112 and one or more additionalbit-lines.

The first RRAM element 104 a includes a first conjunct electrode 106 acoupled to the first terminal of the control device 112 and a firstdisjunct electrode 110 a coupled to the first bit-line BL₁. The firstconjunct electrode 106 a is separated from the first disjunct electrode110 a by way of a first data storage layer 108 a. The second RRAMelement 104 b includes a second conjunct electrode 106 b coupled to thefirst terminal of the control device 112 and a second disjunct electrode110 b coupled to the second bit-line BL₂. The second conjunct electrode106 b is separated from the second disjunct electrode 110 b by way of asecond data storage layer 108 b. The first bit-line BL₁ and the secondbit-line BL₂ are further coupled to a sensing element 114 (e.g., a senseamplifier) configured to read a single data state (i.e., a single databit) of the RRAM cell 102 from the first bit-line BL₁ and the secondbit-line BL₂.

During operation, a conductive filament is respectively formed withineach of the separate RRAM elements 104 a-104 b, so that the RRAM cell102 comprises multiple conductive filaments. For example, a firstconductive filament is formed in the first data storage layer 108 a anda second conductive filament is formed within the second data storagelayer 108 b. Since the first RRAM element 104 a and the second RRAMelement 104 b are both connected to the control device 112, the firstRRAM element 104 a and the second RRAM element 104 b are able togenerate separate read currents, during a read operation, whichcollectively describe the single data state stored in the RRAM cell 102.

For example, a voltage V_(SL) applied to the source-line SL will causethe first RRAM element 104 a and the second RRAM element 104 b togenerate separate read currents, I_(r1) and I_(r2), that arerespectively proportional to the voltage V_(SL) (e.g.,I_(rn)=V_(SL)/R_(n), wherein R_(n) is the resistance of the first RRAMelement 104 a or the second RRAM element 104 b). The separate readcurrents, I_(r1) and I_(r2), respectively describe a data state of theRRAM cell 102, so that a collective read current output from the RRAMcell 102 is equal to approximately twice the read current (i.e.,2V_(SL)/R₁) produced by the first RRAM element 104 a or the second RRAMelement 104 b. Therefore, the RRAM cell 102 is configured to generate acollective read current that is larger than the separate read currentsto give the RRAM cell 102 an improved read current window.

FIG. 2 illustrates a cross-sectional view of some embodiments of amemory circuit 200 having an RRAM cell comprising multiple RRAMelements.

The memory circuit 200 comprises a control device 112 arranged within asubstrate 202. In various embodiments, the control device 112 maycomprise a MOSFET, a bi-polar junction transistor (BJT), a high electronmobility transistor (HEMT), or a similar device. The control device 112has a first terminal, a second terminal, and a third terminal. In someembodiments, wherein the control device 112 comprises a MOSFET, thefirst terminal may comprise a drain region 204 a, the second terminalmay comprise a source region 204 b, and the third terminal may comprisea gate electrode 204 d separated from the substrate 202 by a gatedielectric 204 c. In some embodiments, the control device 112 may bedisposed between isolation regions 206 (e.g., shallow trench isolationregions) within the substrate 202.

A dielectric structure 208 is over the substrate 202. In someembodiments, the dielectric structure 208 comprises a lower inter-leveldielectric (ILD) layer 210 and an upper ILD layer 218 over the lower ILDlayer 210. The lower ILD layer 210 surrounds a lower interconnect layer212 underlying an RRAM cell 102 surrounded by the upper ILD layer 218.In some embodiments, the lower interconnect layer 212 may comprise ametal wire separated from the substrate 202 by way of one or moreadditional lower interconnect layers comprising conductive wires,conductive vias, and/or conductive contacts. In such embodiments, a viacontacts a bottom of the metal wire at a location set back from outeredges of the metal wire. In some embodiments, the lower interconnectlayer 212 may comprise copper, tungsten, aluminum, or the like.

The RRAM cell 102 comprises a first RRAM element 104 a and a second RRAMelement 104 b. The first RRAM element 104 a includes a first conjunctelectrode 106 a separated from a first disjunct electrode 110 a by wayof a first data storage layer 108 a. The first disjunct electrode 110 ais further coupled to a first upper via 216 a. The second RRAM element104 b includes a second conjunct electrode 106 b that is separated froma second disjunct electrode 110 b by way of a second data storage layer108 b. The second disjunct electrode 110 b is further coupled to asecond upper via 216 b. The first data storage layer 108 a is separatedfrom the second data storage layer 108 b by a non-zero distance. In someembodiments, the first upper via 216 a and the second upper via 216 bmay comprise copper, tungsten, aluminum, or the like.

The lower interconnect layer 212 is configured to electrically connectthe first conjunct electrode 106 a of the first RRAM element 104 a andthe second conjunct electrode 106 b of the second RRAM element 104 b. Insome embodiments, the lower interconnect layer 212 may continuouslyextend from directly below the first RRAM element 104 a to directlybelow the second RRAM element 104 b.

During operation, a first conductive filament 214 a may be selectivelyformed within the first data storage layer 108 a and a second conductivefilament 214 b may be selectively formed within the second data storagelayer 108 b. The first conductive filament 214 a causes the first datastorage layer 108 a to have a resistance that defines a data state(e.g., a logical ‘1’) of the RRAM cell 102. Similarly, the secondconductive filament 214 b causes the second data storage layer 108 b tohave a resistance that also defines the same data state (e.g., a logical‘1’) of the RRAM cell 102. Because the first RRAM element 104 a and thesecond RRAM element 104 b are connected by the lower interconnect layer212, the first RRAM element 104 a and the second RRAM element 104 b areable to output separate read currents that collectively describe thedata state stored in the RRAM cell 102, thereby giving the RRAM cell 102an improved read current window.

Although FIG. 2 illustrates an RRAM cell 102 with a first RRAM element104 a coupled to a second RRAM element 104 b by a lower interconnectlayer 212, it will be appreciated that the disclosed memory cell is notlimited to such configurations. Rather, the first RRAM element 104 a maybe coupled to the second RRAM element 104 b by way of any conductiveelement that forms an electrical path between the first data storagelayer 108 a and the second data storage layer 108 b. For example, insome alternative embodiments shown below in FIG. 3, a disclosed memorycircuit 300 may have a first data storage layer 108 a coupled to thesecond data storage layer 108 b by a conductive element comprising ashared electrode.

The memory circuit 300 comprises an RRAM cell 102 having a first RRAMelement 104 a and a second RRAM element 104 b. The first RRAM element104 a comprises a first data storage layer 108 a arranged between ashared electrode 310 and a first disjunct electrode 110 a. The firstdisjunct electrode 110 a is further coupled to a first upper via 216 a.The second RRAM element 104 b comprises a second data storage layer 108b arranged between the shared electrode 310 and a second disjunctelectrode 110 b. The second disjunct electrode 110 b is further coupledto a second upper via 216 b.

The shared electrode 310 continuously extends in a vertical directionbetween a lower interconnect layer 212 and the first and second datastorage layers, 108 a and 108 b. The shared electrode 310 alsocontinuously extends in a horizontal direction between the first datastorage layer 108 a and the second data storage layer 108 b. In someembodiments, the first data storage layer 108 a and the second datastorage layer 108 b may be in direct contact with an upper surface ofthe shared electrode 310. In some embodiments, the shared electrode 310may comprise a lower region 310 a and an upper region 310 b thatlaterally extends past opposing sidewalls of the lower region 310 a.

In some embodiments, the shared electrode 310 may be a differentcomposition of materials than the underlying lower interconnect layer212. For example, the shared electrode 310 may comprise titanium and/ortantalum, while the lower interconnect layer 212 may comprise copperand/or aluminum. In some embodiments (not shown), the shared electrode310 may be laterally separated from a via by the lower ILD layer 210, sothat the shared electrode 310 and the via are intersected by ahorizontal plane that is parallel to an upper surface of the substrate202

FIG. 4 illustrates a cross-sectional view of some additional embodimentsof an integrated chip 400 having a logic region and an embedded memoryregion comprising an RRAM cell having multiple RRAM elements.

The integrated chip 400 comprises a substrate 202 including a logicregion 402 and an embedded memory region 404. A dielectric structure 208is arranged over the substrate 202. The dielectric structure 208comprises a plurality of stacked ILD layers 406 separated by etch stoplayers 408. In some embodiments, the plurality of stacked ILD layers 406may comprise one or more of an oxide layer, a low-k dielectric layer, anultra low-k dielectric layer, or the like. In some embodiments, the etchstop layers 408 may comprise a nitride (e.g., silicon nitride), acarbide (e.g., silicon carbide), or the like.

The logic region 402 comprises a transistor device 410 arranged withinthe substrate 202. The transistor device 410 comprises a source region410 a, a drain region 410 b separated from the source region 410 a by achannel region, and a gate structure 410 g over the channel region. Insome embodiments, the transistor device 410 may comprise a high-k metalgate (HKMG) transistor. The source region 410 a is coupled to a firstplurality of interconnect layers surrounded by the dielectric structure208. The first plurality of interconnect layers comprise a conductivecontact 412, conductive wires 414, and conductive vias 416. In someembodiments, the first plurality of interconnect layers may comprisecopper, tungsten, aluminum, or the like.

The embedded memory region 404 comprises a control device 112 arrangedwithin the substrate 202. The control device 112 is coupled to an RRAMcell 102 by way of a second plurality of interconnect layers. The RRAMcell 102 comprises a first RRAM element 104 a and a second RRAM element104 b. The second plurality of interconnect layers comprise a lowerinterconnect layer 212 electrically coupled to the first RRAM element104 a and the second RRAM element 104 b. The first RRAM element 104 aand the second RRAM element 104 b are arranged along a horizontal planethat intersects one of the conductive vias 416 of the first plurality ofinterconnect layers.

FIG. 5 illustrates a cross-sectional view of some additional embodimentsof an integrated chip 500 having an RRAM cell comprising multiple RRAMelements.

The integrated chip 500 comprises an RRAM cell 102 arranged over a lowerinterconnect layer 212 within a lower ILD layer 210. The RRAM cell 102comprises a first RRAM element 104 a and a second RRAM element 104 b.The first RRAM element 104 a has a first conjunct electrode 502 aseparated from a first disjunct electrode 110 a by a first data storagelayer 108 a having a variable resistance. In some embodiments, the firstconjunct electrode 502 a may comprise a barrier layer 502 a ₁ (e.g.,titanium nitride, tantalum nitride, or the like) and a metal layer 502 a₂ (e.g., titanium, tantalum, or the like). In some embodiments, thefirst RRAM element 104 a may further comprise a first capping layer 504a between the first data storage layer 108 a and the first disjunctelectrode 110 a, and/or a first hard mask layer 506 a over the firstdisjunct electrode 110 a.

The second RRAM element 104 b has a second conjunct electrode 502 bseparated from a second disjunct electrode 110 b by a second datastorage layer 108 b having a variable resistance. In some embodiments,the second conjunct electrode 502 b may comprise a barrier layer 502 b ₁(e.g., titanium nitride, tantalum nitride, or the like) and a metallayer 502 b ₂. In some embodiments, the second RRAM element 104 b mayfurther comprise a second capping layer 504 b between the second datastorage layer 108 b and the second disjunct electrode 110 b, and/or asecond hard mask layer 506 b over the second disjunct electrode 110 b.In some embodiments, sidewall spacers 510 may be arranged on opposingsides of the first disjunct electrode 110 a and the second disjunctelectrode 110 b.

In some embodiments, a lower insulating layer 508 is arranged over thelower ILD layer 210 and the lower interconnect layer 212. In someembodiments, the first conjunct electrode 502 a and the second conjunctelectrode 502 b respectively comprise a horizontally extending lowersurface arranged over the lower insulating layer 508 and a protrusionthat protrudes outward from the horizontally extending lower surface andextends through the lower insulating layer 508 to the lower interconnectlayer 212.

In some embodiments, the first conjunct electrode 502 a, the firstdisjunct electrode 110 a, the second conjunct electrode 502 b, and thesecond disjunct electrode 110 b may comprise a metal, such as tantalum(Ta), titanium (Ti), or the like. In some embodiments, the first datastorage layer 108 a and the second data storage layer 108 b may compriseone or more high-k dielectric materials, such as titanium aluminumoxide, hafnium tantalum oxide, zirconium lanthanum oxide, or the like.In some embodiments, the first capping layer 504 a and the secondcapping layer 504 b may comprise a metal (e.g., such as titanium (Ti),hafnium (Hf), platinum (Pt), aluminum (Al), or the like) or a metaloxide (e.g., such as titanium oxide (TiO), hafnium oxide (HfO),zirconium oxide (ZrO), germanium oxide (GeO), cesium oxide (CeO), or thelike). In some embodiments, the first hard mask layer 506 a and thesecond hard mask layer 506 b may comprise silicon oxy-nitride (SiON),silicon dioxide (SiO₂), or PE-SiN, or the like. In some embodiments, thesidewall spacers 510 may comprise a nitride (e.g., silicon nitride orsilicon oxy-nitride), an oxide (e.g., silicon dioxide), or the like.

An upper ILD layer 218 is disposed over the first RRAM element 104 a andthe second RRAM element 104 b. The upper ILD layer 218 surrounds a firstupper interconnect structure 514 a disposed onto the first disjunctelectrode 110 a and a second upper interconnect structure 514 b disposedonto the second disjunct electrode 110 b. The upper interconnectstructures, 514 a and 514 b, respectively comprises an upper via, 216 aand 216 b, and an upper wire, 516 a and 516 b. In some embodiments, theupper ILD layer 218 may be separated from the first RRAM element 104 aand the second RRAM element 104 b by an upper insulating layer 512. Insome embodiments, the upper insulating layer 512 may comprise siliconnitride, silicon oxide, or the like.

FIG. 6 illustrates a cross-sectional view of some embodiments of anintegrated chip 600 comprising an RRAM cell comprising multiple RRAMelements.

The integrated chip 600 comprises a control device 112 arranged within asubstrate 202. The control device 112 comprises a drain region 204 aseparated from a source region 204 b by a channel region. A gateelectrode 204 d is separated from the channel region by a gatedielectric 204 c.

A lower ILD structure 602 is arranged over the substrate 202. Aplurality of interconnect layers including conductive contacts 412,conductive wires 414, and conductive vias 416 are surrounded by thelower ILD structure 602. The conductive wires 414 includes a source-lineSL comprising a first interconnect wire that is electrically coupled tothe source region 204 b. In some embodiments, the source-line SL may bearranged in a second metal wire layer that is connected to the sourceregion 204 b through a contact, a first metal wire layer, and a firstmetal via layer. The conductive wires 414 further comprise a word-lineWL comprising a second interconnect wire that is electrically coupled tothe gate electrode 204 d. In some embodiments, the word-line WL may bearranged in the first metal wire layer that is connected to the gateelectrode 204 d by way of a contact.

An RRAM cell 102 is arranged over the lower ILD structure 602. The RRAMcell 102 comprises a first RRAM element 104 a and a second RRAM element104 b. The first RRAM element 104 a and the second RRAM element 104 bare directly connected to the drain region 204 a by the plurality ofinterconnect layers. The first RRAM element 104 a is further coupled toa first bit-line BL₁ by way of a first upper interconnect structure 514a and the second RRAM element 104 b is further coupled to a secondbit-line BL₂ by way of a second upper interconnect structure 514 b.

Although integrated chip 600 illustrates the word-line WL, thesource-line SL, the first bit-line BL₁, the second bit-line BL₂, and theRRAM cell 102 as being located at certain levels within a BEOL stack, itwill be appreciated that the position of these elements is not limitedto those illustrated positions. Rather, the elements may be at differentlocations within a BEOL stack. For example, in some alternativeembodiments, the RRAM cell 102 may be located between a second and thirdmetal interconnect wire.

FIG. 7 illustrates a schematic diagram of some embodiments of a memorycircuit 700 having a plurality of RRAM cells respectively comprisingmultiple RRAM elements.

The memory circuit 700 comprises a memory array 702 having a pluralityof RRAM cells 102. The plurality of RRAM cells 102 are arranged withinthe memory array 702 in rows and/or columns. The plurality of RRAM cells102 within a row are operably coupled to a word-line WL₁-WL_(m). Theplurality of RRAM cells 102 within a column are operably coupled to twoor more bit-lines BL₁-BL_(2n) and a source-line SL₁-SL_(n).

A control device 112 comprising an access transistor is coupled to afirst RRAM element 104 a and a second RRAM element 104 b within arespective one of the plurality of RRAM cells 102. In some embodiments,the first RRAM element 104 a has a first conjunct electrode coupled tothe control device 112 and a first disjunct electrode coupled to a firstbit-line BL_(2n-1), while the second RRAM element 104 b has a secondconjunct electrode coupled to the control device 112 and a seconddisjunct electrode coupled to a second bit-line BL_(2n). The controldevice 112 further has a gate coupled to a word-line WL₁-WL_(m) and asource coupled to a source-line SL₁-SL_(n).

The memory array 702 is coupled to support circuitry that is configuredto read data from and/or write data to a plurality of RRAM cells 102. Insome embodiments, the support circuitry comprises a word-line decoder704, a bit-line decoder 706, sensing circuitry 708 comprising one ormore sense amplifiers, a source-line decoder 710, and/or a control unit712. The word-line decoder 704 is configured to selectively apply asignal (e.g., a current and/or voltage) to one of the word-linesWL₁-WL_(m), the bit-line decoder 706 is configured to selectively applya signal to one or more of the plurality of bit-lines BL₁-BL_(2n), andthe source-line decoder 710 is configured to selectively apply a signalto one or more of the plurality of source-lines SL₁-SL_(n) based upon anaddress ADDR received from the control unit 712. By selectively applyingsignals to the word-lines WL₁-WL_(m) the bit-lines BL₁-BL_(2n), and/orthe source-lines SL₁-BL_(n), the support circuitry is able to performforming, set, reset, and read operations on selected ones of pluralityof RRAM cells 102.

FIGS. 8A-8B illustrate some embodiments of operating conditions of amemory circuit (e.g., memory circuit 100) comprising an RRAM cell havingmultiple RRAM elements respectively configured to form a conductivefilament.

FIG. 8A illustrates a schematic diagram 800 of an RRAM cell 102 havingmultiple RRAM elements, 104 a and 104 b, coupled to a drain terminal Dof a control device 112 comprising a transistor device. As shown inschematic diagram 800, during operation of the RRAM cell 102 a firstbit-line voltage V_(BL1) may be applied to a first bit-line BL₁ coupledto a first RRAM element 104 a and a second bit-line voltage V_(BL2) maybe applied to a second bit-line BL₂ coupled to a second RRAM element 104b. A word-line voltage V_(WL) may be applied to a gate terminal G of acontrol device 112 and a source-line voltage V_(SL) may be applied to asource terminal S of the control device 112.

FIG. 8B illustrates a table 802 showing exemplary bias voltage valuesthat may be applied to the RRAM cell 102 shown in schematic diagram 800to perform forming, set, reset, and read operations. The table 802 hasseparate columns for selected RRAM cells and unselected RRAM cells.Although specific voltage values are illustrated in the table 802, itwill be appreciated that the operations described in the table 802 arenot limited to those voltage values, but rather may be performed usingdifferent voltages values in some alternative embodiments.

Rows 804-806 of table 802 describe some exemplary bias voltage valuesthat may be used to perform forming operations on the first RRAM element104 a and the second RRAM element 104 b of the RRAM cell 102 shown inschematic diagram 800.

As shown in row 804 of table 802, to perform a first forming operationto form a first initial conductive filament within a first RRAM element104 a, a word-line voltage V_(WL) having a non-zero value (e.g., betweenapproximately 0.8 V and approximately 1.4 V) is applied to the gateterminal G of the control device 112. A first bit-line voltage V_(BL1)having a non-zero value (e.g., between approximately 2.8 V andapproximately 3.6 V) is applied to the first bit-line BL₁ and a secondbit-line voltage V_(BL2) having a substantially zero value isconcurrently applied to the second bit-line BL₂. A source-line voltageV_(SL) having a substantially zero value is applied to the sourceterminal S of the control device 112. The bias conditions of row 804form a potential difference across the first RRAM element 104 a that issufficiently large to form the first initial conductive filament.

As shown in row 806 of table 802, to perform a second forming operationto form a second initial conductive filament within a second RRAMelement 104 b, a word-line voltage V_(WL) having a non-zero value (e.g.,between approximately 0.8 V and approximately 1.4 V) is applied to thegate terminal G of the control device 112. A first bit-line voltageV_(BL1) having a substantially zero value is applied to the firstbit-line BL₁ and a second bit-line voltage V_(BL2) having a non-zerovalue (e.g., between approximately 2.8 V and approximately 3.6 V) isconcurrently applied to the second bit-line BL₂. A source-line voltageV_(SL) having a substantially zero value is applied to the sourceterminal S of the control device 112. The bias conditions of row 806form a potential difference across the second RRAM element 104 b that issufficiently large to form the second initial conductive filament

Row 808 describes some exemplary bias voltage values that may be used toperform a set operation on the first RRAM element 104 a and the secondRRAM element 104 b of the RRAM cell 102 shown in schematic diagram 800.During the set operation, the bias voltage values induce a conductivepath/filament (e.g., chains of oxygen vacancies) to form within thefirst RRAM element 104 a and the second RRAM element 104 b to form a lowresisitive state within the RRAM cell 102.

As shown in row 808 of table 802, to perform a set operation a word-linevoltage having a non-zero value (e.g., between approximately 1.6 V andapproximately 2.4 V) is applied to the gate terminal G of the controldevice 112. A first bit-line voltage V_(BL1) and a second bit-linevoltage V_(BL2) having non-zero values (e.g., between approximately 1.6V and approximately 2.0 V) are concurrently applied to the firstbit-line BL₁ and the second bit-line BL₂. A source-line voltage having asubstantially zero value is applied to the source terminal S of thecontrol device 112. The bias conditions of row 808 cause oxygenvacancies to accumulate within separate data storage layers of the firstRRAM element 104 a and the second RRAM element 104 b. The accumulationof oxygen vacancies forms separate conductive filaments within the datastorage layers, causing a low resistive state to be written to the RRAMcell 102.

Row 810 describes some exemplary bias voltage values that may be used toperform a reset operation on the first RRAM element 104 a and the secondRRAM element 104 b of the RRAM cell 102 shown in schematic diagram 800.During the reset operation, the bias voltage values break conductivepaths/filaments within the first RRAM element 104 a and the second RRAMelement 104 b to form a high resisitive state within the RRAM cell 102.

As shown in row 810 of table 802, to perform a reset operation aword-line voltage having a non-zero value (e.g., between approximately1.8 V and approximately 3.0 V) is applied to the gate terminal G of thecontrol device 112. A first bit-line voltage V_(BL1) and a secondbit-line voltage V_(BL2) having a substantially zero value areconcurrently applied to the first bit-line BL₁ and the second bit-lineBL₂. A source-line voltage V_(SL) having a non-zero value (e.g., betweenapproximately 1.6 V and approximately 2.0 V) is applied to the sourceterminal S of the control device 112. The bias conditions of row 810drive oxygen vacancies out from within the separate data storage layersof the first RRAM element 104 a and the second RRAM element 104 b.Driving oxygen vacancies out of the data storage layers break theseparate conductive filaments within the data storage layers, causing ahigh resistive state to be written to the RRAM cell 102.

As shown in row 812 of table 802, to perform a read operation aword-line voltage having a non-zero value (e.g., between approximately0.9 V and approximately 1.3 V) is applied to the gate terminal G of thecontrol device 112. A first bit-line voltage V_(BL1) and a secondbit-line voltage V_(BL2) having a substantially zero value areconcurrently applied to the first bit-line BL₁ and the second bit-lineBL₂. A source-line voltage V_(SL) having a non-zero value (e.g., betweenapproximately 0.2 V and approximately 0.4 V) is applied to the sourceterminal S of the control device 112. The bias conditions of row 812cause separate read currents to be output from the first RRAM element104 a and the second RRAM element 104 b, which are respectivelydependent upon resistive states of the first RRAM element 104 a and thesecond RRAM element 104 b.

FIGS. 9-17 illustrate cross-sectional views 900-1700 of some embodimentsof a method of forming an integrated chip comprising a memory circuithaving an RRAM memory cell with multiple RRAM elements. Although FIGS.9-17 are described in relation to a method, it will be appreciated thatthe structures disclosed in FIGS. 9-17 are not limited to such a method,but instead may stand alone as structures independent of the method.

As shown in cross-sectional view 900 of FIG. 9, a lower interconnectlayer 212 is formed within a lower inter-level dielectric (ILD) layer210 over a substrate 202. In various embodiments, the substrate 202 maybe any type of semiconductor body (e.g., silicon, SiGe, SOI, or thelike), such as a semiconductor wafer and/or one or more die on a wafer,as well as any other type of semiconductor and/or epitaxial layers,associated therewith. In some embodiments, the lower interconnect layer212 may be formed by selectively etching the lower ILD layer 210 (e.g.,an oxide, a low-k dielectric, an ultra low-k dielectric, or the like) todefine an opening within the lower ILD layer 210. A metal (e.g., copper,aluminum, etc.) is then deposited to fill the opening, and aplanarization process (e.g., a chemical mechanical planarizationprocess) is performed to remove excess metal.

In some embodiments, the substrate 202 may comprise a logic region 402and an embedded memory region 404. In some such embodiments, aconductive wire 414 may be formed in the lower ILD layer 210 within thelogic region 402 concurrent to the formation of a conductive wirecomprising the lower interconnect layer 212 within the embedded memoryregion 404.

As shown in cross-sectional view 1000 of FIG. 10, a lower insulatinglayer 508 is formed onto the lower interconnect layer 212 and the lowerILD layer 210. In some embodiments, the lower insulating layer 508 maycomprise silicon-nitride (SiN), silicon-carbide (SiC), or a similarcomposite dielectric film. In some embodiments, the lower insulatinglayer 508 may be formed by a deposition technique (e.g., physical vapordeposition (PVD), chemical vapor deposition (CVD), PE-CVD, atomic layerdeposition (ALD), sputtering, or the like) to a thickness in a range ofbetween approximately 200 angstroms and approximately 300 angstroms. Inother embodiments, the lower insulating layer 508 may be formed by adeposition technique to smaller or larger thicknesses.

After being deposited, the lower insulating layer 508 is selectivelyexposed to a first etchant 1002 (e.g., a dry etchant and/or a wetetchant) that forms sidewalls defining a plurality of openings 1004within the lower insulating layer 508. The plurality of openings 1004extend through the lower insulating layer 508 to the lower interconnectlayer 212. In some embodiments, the lower insulating layer 508 may beselectively exposed to the first etchant 1002 according to a firstmasking layer (not shown) formed over the lower insulating layer 508. Insome embodiments, the first etchant 1002 does not form openings withinthe lower insulating layer 508 within the logic region 402.

As shown in cross-sectional view 1100 of FIG. 11, a conjunct electrodestructure 1102 is formed over the lower interconnect layer 212 and thelower ILD layer 210. The conjunct electrode structure 1102 extends fromwithin the plurality of openings 1004 to a position overlying the lowerinsulating layer 508. In some embodiments, the conjunct electrodestructure 1102 is formed by performing separate depositions to form afirst conjunct electrode film and subsequently forming a second conjunctelectrode film over the first conjunct electrode film. In someembodiments, the first conjunct electrode film may comprise a barrierlayer such as tantalum nitride (TaN), titanium nitride (TiN), or thelike. In some embodiments, the second conjunct electrode film maycomprise a metal such as tantalum (Ta), titanium (Ti), or the like.

As shown in cross-sectional view 1200 of FIG. 12, a planarizationprocess is performed on the conjunct electrode structure 1102 (alongline 1204). The planarization process removes a part of the conjunctelectrode structure 1102 and results in a conjunct electrode structure1202 having a planar upper surface 1202 u facing away from the substrate202. In some embodiments, the planarization process may comprise achemical mechanical planarization (CMP) process. In some embodiments,the planarization process results in the conjunct electrode structure1202 having a thickness in a range of between approximately 100angstroms and approximately 500 angstroms over the lower insulatinglayer 508.

As shown in cross-sectional view 1300 of FIG. 13, a data storage film1302 is formed over the conjunct electrode structure 1202, a cappinglayer film 1304 is formed over the data storage film 1302, and adisjunct electrode structure 1306 is formed over the capping layer film1304. In some embodiments, the data storage film 1302 may comprise ahigh-k dielectric material having a variable resistance. For example, insome embodiments, the data storage film 1302 may comprise hafnium oxide(HfO_(X)), zirconium oxide (ZrO_(X)), aluminum oxide (AlO_(X)), nickeloxide (NiO_(X)), tantalum oxide (TaO_(X)), titanium oxide (TiO_(X)), orthe like. In some embodiments, the data storage film 1302 may be formedto a thickness in a range of between approximately 25 angstroms andapproximately 75 angstroms. In some embodiments, the capping layer film1304 may comprise a metal (e.g., such as titanium (Ti), hafnium (Hf),platinum (Pt), aluminum (Al), or the like) or a metal oxide (e.g., suchas titanium oxide (TiO_(x)), hafnium oxide (HfO_(x)), zirconium oxide(ZrO_(x)), germanium oxide (GeO_(x)), cesium oxide (CeO_(x)), or thelike). In some embodiments, the disjunct electrode structure 1306 maycomprise a metal, such as titanium (Ti), tantalum (Ta), or the like. Insome embodiments, the disjunct electrode structure 1306 may be formed byway of a deposition technique (e.g., PVD, CVD, PE-CVD, sputtering, ALD,or the like). In some embodiments, the disjunct electrode structure 1306may have a thickness in a range of between approximately 100 angstromsand approximately 400 angstroms.

As shown in cross-sectional view 1400 of FIG. 14, a first patterningprocess is performed. The first patterning process removes the cappinglayer film (1304 of FIG. 13) and the disjunct electrode structure (1306of FIG. 13) from the logic region 402. The first patterning process alsoselectively removes the capping layer film (1304 of FIG. 13) and thedisjunct electrode structure (1306 of FIG. 13) from the embedded memoryregion 404 to define a first disjunct electrode 110 a and a seconddisjunct electrode 110 b. In some embodiments, the conjunct electrodestructure 1202 continuously extends below the first disjunct electrode110 a and the second disjunct electrode 110 b. In some embodiments, thefirst patterning process comprises forming a first hard mask layer 506 aand a second hard mask layer 506 b over the disjunct electrode structure(1306 of FIG. 13). The disjunct electrode structure is then exposed to afirst etchant (e.g., a dry etchant and/or a wet etchant) according tothe first hard mask layer 506 a and the second hard mask layer 506 b toremove unmasked parts of the capping layer film (1304 of FIG. 13) andthe disjunct electrode structure (1306 of FIG. 13). In variousembodiments, the first hard mask layer 506 a and the second hard masklayer 506 b may comprise silicon-oxide (SiO₂), silicon-oxynitride(SiON), silicon-nitride (SiN) silicon-carbide (SiC), or the like.

In some embodiments, sidewall spacers 510 may be formed on opposingsides of the first disjunct electrode 110 a and the second disjunctelectrode 110 b. The sidewall spacers 510 may be formed by depositing aspacer layer on the data storage film 1302, the first disjunct electrode110 a, the second disjunct electrode 110 b, the first hard mask layer506 a, and the second hard mask layer 506 b. In some embodiments, thespacer layer may be deposited by a deposition technique (e.g., PVD, CVD,PE-CVD, ALD, sputtering, etc.) to a thickness in a range of betweenapproximately 400 angstroms and approximately 600 angstroms. The spacerlayer is subsequently etched to remove the spacer layer from horizontalsurfaces, leaving the spacer layer along opposing sides of the disjunctelectrodes, 110 a and 110 b, as the sidewall spacers 510. In variousembodiments, the spacer layer may comprise silicon nitride, silicondioxide (SiO₂), silicon oxy-nitride (e.g., SiON), or the like.

As shown in cross-sectional view 1500 of FIG. 15, a second patterningprocess is performed. The second patterning process removes the datastorage film (1302 of FIG. 14) and the conjunct electrode structure(1202 of FIG. 14) from the logic region 402. The second patterningprocess also selectively removes the data storage film (1302 of FIG. 14)and the conjunct electrode structure (1202 of FIG. 14) from the embeddedmemory region 404 to define a first data storage layer 108 a over afirst conjunct electrode 106 a and a second data storage layer 108 bover a second conjunct electrode 106 b. In some embodiments, the secondpatterning process selectively exposes the data storage film (1302 ofFIG. 14) and the conjunct electrode structure (1202 of FIG. 14) to asecond etchant according to a mask comprising the first hard mask layer506 a, the second hard mask layer 506 b, and the sidewall spacers 510.

As shown in cross-sectional view 1600 of FIG. 16, an upper insulatinglayer 512 is formed over a first RRAM element 104 a and a second RRAMelement 104 b. An upper inter-level dielectric (ILD) layer 218 issubsequently formed over the upper insulating layer 512. The upperinsulating layer 512 has a first side facing the substrate 202 and asecond side that abuts the upper ILD layer 218.

As shown in cross-sectional view 1700 of FIG. 17, upper interconnectstructures, 514 a and 514 b, are formed over the first RRAM element 104a and the second RRAM element 104 b. In some embodiments, the upperinterconnect structures, 514 a and 514 b, respectively comprise an uppervia, 216 a and 216 b, and an upper wire, 516 a and 516 b. In someembodiments, the upper interconnect structures, 514 a and 514 b, may beformed by etching the upper ILD layer 218 to form a first opening thatextends through the upper ILD layer 218 and the first hard mask layer506 a to the first disjunct electrode 110 a and to form a second openingthat extends through the upper ILD layer 218 and the second hard masklayer 506 b to the second disjunct electrode 110 b. The openings arethen filled with a metal (e.g., copper and/or aluminum) to form theupper via, 216 a and 216 b, and an upper wire, 516 a and 516 b.

In some embodiments, a conductive via 416 and a conductive wire 414 maybe formed within the logic region 402 concurrent to the formation of theupper interconnect structures, 514 a and 514 b. The conductive via 416extends through the upper ILD layer 218, the upper insulating layer 512and the lower insulating layer 508 to the conductive wire 414.

FIG. 18 illustrates a flow diagram of some embodiments of a method 1800of forming an integrated chip comprising a memory circuit having an RRAMcell with multiple RRAM elements.

While method 1800 is illustrated and described below as a series of actsor events, it will be appreciated that the illustrated ordering of suchacts or events are not to be interpreted in a limiting sense. Forexample, some acts may occur in different orders and/or concurrentlywith other acts or events apart from those illustrated and/or describedherein. In addition, not all illustrated acts may be required toimplement one or more aspects or embodiments of the description herein.Further, one or more of the acts depicted herein may be carried out inone or more separate acts and/or phases.

At 1802, a lower interconnect layer is formed within a lower ILD layerover a substrate. The lower interconnect layer is coupled to a controldevice within the substrate. FIG. 9 illustrates a cross-sectional view900 of some embodiments corresponding to act 1802.

At 1804, a lower insulating layer is formed over the lower interconnectlayer and the lower ILD layer. FIG. 10 illustrates a cross-sectionalview 1000 of some embodiments corresponding to act 1804.

At 1806, the lower insulating layer is patterned to define a pluralityof openings exposing the lower interconnect layer. FIG. 10 illustrates across-sectional view 1000 of some embodiments corresponding to act 1806.

At 1808, a conjunct electrode structure is formed over the lowerinsulating layer and within the plurality of openings. FIG. 11illustrates a cross-sectional view 1100 of some embodimentscorresponding to act 1808.

At 1810, a data storage film is formed over the conjunct electrodestructure. FIG. 13 illustrates a cross-sectional view 1300 of someembodiments corresponding to act 1810.

At 1812, a capping layer film is formed over the data storage film. FIG.13 illustrates a cross-sectional view 1300 of some embodimentscorresponding to act 1812.

At 1814, an disjunct electrode structure is formed over the cappinglayer film. FIG. 13 illustrates a cross-sectional view 1300 of someembodiments corresponding to act 1814.

At 1816, the disjunct electrode structure is selectively patterned usinga first patterning process to define a plurality of disjunct electrodes.In some embodiments, the first patterning process may further define aplurality of capping layers. FIG. 14 illustrates some embodiments of across-sectional view 1400 corresponding to act 1816.

At 1818, sidewall spacers are formed over the data storage film and onopposing sides of the plurality of disjunct electrodes. FIG. 14illustrates some embodiments of a cross-sectional view 1400corresponding to act 1818.

At 1820, the data storage film and conjunct electrode structure areselectively patterned using a second patterning process to define a datastorage layer and a plurality of conjunct electrodes. FIG. 15illustrates some embodiments of a cross-sectional view 1500corresponding to act 1820.

At 1822, an upper inter-level dielectric (ILD) layer is formed over thelower ILD layer. FIG. 16 illustrates some embodiments of across-sectional view 1600 corresponding to act 1822.

At 1824, upper interconnect structures are formed onto the plurality ofdisjunct electrodes. FIG. 17 illustrates some embodiments of across-sectional view 1700 corresponding to act 1824.

Therefore, the present disclosure relates to a RRAM circuit having aRRAM cell comprising multiple RRAM elements respectively configured toform a conductive filament. By using multiple RRAM elements to formseparate conductive filaments, the RRAM cell is able to overcomeperformance degradation due to a limited resistance of a singleconductive filament.

In some embodiments, the present disclosure relates to a memory circuit.The memory circuit includes a first resistive random access memory(RRAM) element arranged within a dielectric structure over a substrateand having a first conjunct electrode separated from a first disjunctelectrode by a first data storage layer; a second RRAM element arrangedwithin the dielectric structure and having a second conjunct electrodeseparated from a second disjunct electrode by a second data storagelayer; and a control device disposed within the substrate and havingfirst terminal coupled to the first conjunct electrode and the secondconjunct electrode and a second terminal coupled to a word-line. In someembodiments, the first data storage layer and the second data storagelayer are configured to collectively store a single data state. In someembodiments, the first conjunct electrode and the second conjunctelectrode are a shared electrode continuously extending from directlybelow the first data storage layer to directly below the second datastorage layer. In some embodiments, the first conjunct electrode iscoupled to the second conjunct electrode by a lower interconnect layerdisposed within the dielectric structure at a location between the firstconjunct electrode and the control device. In some embodiments, thefirst conjunct electrode is coupled to the second conjunct electrode bya lower interconnect layer continuously extending from directly belowthe first data storage layer to directly below the second data storagelayer. In some embodiments, the first conjunct electrode and the secondconjunct electrode are coupled to a same source-line. In someembodiments, the first disjunct electrode is coupled to a first bit-lineand the second disjunct electrode is coupled to a second bit-linedifferent than the first bit-line. In some embodiments, the controldevice comprises a transistor device having a source region coupled to asource-line, a gate electrode coupled to the word-line, and a drainregion electrically coupled to the first conjunct electrode and thesecond conjunct electrode. In some embodiments, the first data storagelayer and the second data storage layer have a variable resistance.

In other embodiments, the present disclosure relates to a memorycircuit. The memory circuit includes a first resistive random accessmemory (RRAM) element arranged within a dielectric structure over asubstrate and having a first conjunct electrode separated from a firstdisjunct electrode by a first data storage layer; a second RRAM elementarranged within the dielectric structure and having a second conjunctelectrode separated from a second disjunct electrode by a second datastorage layer; and a conductive element continuously extending fromdirectly below the first data storage layer to directly below the seconddata storage layer, wherein the conductive element is configured toelectrically couple the first conjunct electrode to the second conjunctelectrode. In some embodiments, the first data storage layer has a firstoutermost sidewall that is separated from a second outermost sidewall ofthe second data storage layer by a non-zero distance. In someembodiments, the first data storage layer and the second data storagelayer are configured to collectively store a single data state. In someembodiments, the first conjunct electrode and the second conjunctelectrode comprise a first material; and the conductive elementcomprises a second material that is different than the first material.In some embodiments, the memory circuit further includes a transistordevice disposed within the substrate and having a drain regionelectrically coupled to the first conjunct electrode and the secondconjunct electrode. In some embodiments, the first conjunct electrode iscoupled to the second conjunct electrode by a lower interconnect layerbetween the first conjunct electrode and the transistor device. In someembodiments, the first disjunct electrode is coupled to a first bit-lineand the second disjunct electrode is coupled to a second bit-line thatis different than the first bit-line. In some embodiments, the memorycircuit further includes sidewall spacers arranged between the firstdisjunct electrode and the second disjunct electrode.

In yet other embodiments, the present disclosure relates to a method offorming a memory circuit. The method includes forming a lowerinterconnect layer within a lower inter-level dielectric (ILD) layerover a substrate; forming a conjunct electrode structure over the lowerinterconnect layer; forming a data storage film over the conjunctelectrode structure; forming an disjunct electrode structure over thedata storage film; and patterning the data storage film, the disjunctelectrode structure, and the conjunct electrode structure to form afirst data storage layer between the lower interconnect layer and afirst disjunct electrode and to form a second data storage layer betweenthe lower interconnect layer and a second disjunct electrode. In someembodiments, the disjunct electrode structure is patterned by a firstpatterning process and the data storage film and the conjunct electrodestructure are patterned by a second patterning process that occurs afterthe first patterning process. In some embodiments, the method furtherincludes forming a lower insulating layer over the lower ILD layer;patterning the lower insulating layer to form a plurality of openingsexposing the lower interconnect layer; and forming the conjunctelectrode structure to fill the openings and extend over the lowerinsulating layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein. Forexample, although the disclosure describes the oxygen barrier layer asbeing within a multi-layer disjunct electrode, it will be appreciatedthat the oxygen barrier layer is not limited to the disjunct electrode.Rather, the oxygen barrier layer may also or alternatively be present ina multi-layer conjunct electrode.

Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated chip, comprising: a conductiveelement disposed within a dielectric structure over a substrate, whereinthe conductive element comprises a top surface extending betweenoutermost sidewalls of the conductive element; a first resistive randomaccess memory (RRAM) element arranged within the dielectric structureand having a first data storage layer directly contacting the topsurface of the conductive element; and a second RRAM element arrangedwithin the dielectric structure and having a second data storage layerdirectly contacting the top surface of the conductive element.
 2. Theintegrated chip of claim 1, wherein a bottom surface of the conductiveelement has smaller width than the top surface of the conductiveelement.
 3. The integrated chip of claim 2, further comprising: one ormore lower interconnect layers disposed within a lower inter-leveldielectric (ILD) structure that is between the bottom surface of theconductive element and the substrate.
 4. The integrated chip of claim 3,wherein the conductive element is a different material than the one ormore lower interconnect layers.
 5. The integrated chip of claim 3,further comprising: an insulating layer disposed over the lower ILDstructure and laterally surrounding a part of the conductive element,wherein the conductive element has a lower surface that is over theinsulating layer.
 6. The integrated chip of claim 5, wherein theconductive element extends from a bottom of the insulating layer toabove a top of the insulating layer.
 7. The integrated chip of claim 5,further comprising: an upper insulating layer continuously extendingover the first RRAM element and the second RRAM element; and an upperinter-level dielectric (ILD) structure laterally surrounding the firstRRAM element and the second RRAM element, wherein the upper insulatinglayer separates the insulating layer from the upper ILD structure. 8.The integrated chip of claim 1, wherein the first RRAM element comprisesa first upper electrode separated from the conductive element by thefirst data storage layer and the second RRAM element comprises a secondupper electrode separated from the conductive element by the second datastorage layer; and wherein the first upper electrode, the second upperelectrode, and the conductive element comprise a same material.
 9. Theintegrated chip of claim 1, further comprising: a bit-line decodercoupled to a first bit-line that is coupled to the first RRAM elementand to a second bit-line that is coupled to the second RRAM element,wherein the bit-line decoder is configured to concurrently apply a samebias voltage to the first bit-line and to the second bit-line during aset operation.
 10. A memory circuit, comprising: a first resistiverandom access memory (RRAM) element arranged within a dielectricstructure over a substrate and having a first lower electrode; a secondRRAM element arranged within the dielectric structure and having asecond lower electrode, wherein the dielectric structure comprises aninsulating layer laterally surrounding the first lower electrode and thesecond lower electrode, the first lower electrode and the second lowerelectrode continuously extending from directly between sidewalls of theinsulating layer to above a top surface of the insulating layer; andwherein the first lower electrode is coupled to the second lowerelectrode by a lower interconnect layer disposed within the dielectricstructure at a location between the first lower electrode and thesubstrate.
 11. The memory circuit of claim 10, further comprising: oneor more sidewall spacers arranged along opposing sides of the first RRAMelement, wherein the one or more sidewall spacers have a bottom surfacedisposed directly over a top surface of the first lower electrode. 12.The memory circuit of claim 10, wherein a bottom surface of the firstlower electrode has smaller width than a top surface of the first lowerelectrode.
 13. The memory circuit of claim 10, wherein the first RRAMelement comprises a first data storage layer over the first lowerelectrode, the first data storage layer having a larger width than abottom surface of the first lower electrode.
 14. The memory circuit ofclaim 10, wherein the first lower electrode has a lower surface facingan upper surface of the insulating layer.
 15. A memory circuit,comprising: a control device; a first resistive random access memory(RRAM) element coupled between a first terminal of the control deviceand a first bit-line; a second RRAM element coupled between the firstterminal of the control device and a second bit-line; and a sensingelement operably coupled to the first bit-line and to the secondbit-line and configured to read a single data state from the firstbit-line and the second bit-line.
 16. The memory circuit of claim 15,further comprising: a bit-line decoder coupled to the first bit-line andthe second bit-line.
 17. The memory circuit of claim 16, wherein thebit-line decoder is configured to concurrently apply a same bias voltageto the first bit-line and to the second bit-line during a set operation.18. The memory circuit of claim 16, wherein the bit-line decoder isconfigured to concurrently apply a same bias voltage to the firstbit-line and to the second bit-line during a read operation that readsdata from the first RRAM element.
 19. The memory circuit of claim 16,wherein the control device comprises a transistor device having a sourceterminal coupled to a source-line, a gate terminal coupled to aword-line, and a drain terminal coupled to the first RRAM element andthe second RRAM element; wherein during a read operation: a source-linedecoder is configured to apply a first bias voltage to the source-line;a word-line decoder is configured to apply a second bias voltage to theword-line; and the bit-line decoder is configured to apply a third biasvoltage to the first bit-line and the second bit-line, the third biasvoltage smaller than the first bias voltage and the second bias voltage.20. The memory circuit of claim 15, wherein the first RRAM element isarranged within a dielectric structure over a substrate and comprises afirst lower electrode; and wherein the second RRAM element is arrangedwithin the dielectric structure and comprises a second lower electrode,the dielectric structure comprising an insulating layer laterallysurrounding the first lower electrode and the second lower electrode,the first lower electrode and the second lower electrode extending froma bottom surface of the insulating layer to over a top surface of theinsulating layer.